External Reference
Silicon Carbide Pressure Sensors for Harsh Environments
The paper describes the fabrication of a silicon carbide piezoresistive pressure sensors intended for operating temperatures of up to 600°C. The different fabrication aspects, such as the metallization scheme, the etching of a 300μm deep cavity, and the bonding to a silicon carbide back plate are discussed in detail.

Authors: A. C. Hoogerwerf; G. S. Durante; R. J. James; M. Dubois; O. Dubochet; M. Despont

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