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Stabilized Mode-Locked Tapered Monolithic Laser Diode with 200pJ Pulse Energy for Space Metrology Applications
European Space Agency (ESA) considers Mode-Locked Semi-Conductor Laser (MLSCL) technology as a promising candidate for applications in precision optical metrology spaceborne systems such as High Accuracy Absolute Long Distance Measurement (HAALDM). Very challenging performance requirements should be met for these applications: pulse duration <; 1ps, pulse repetition frequency (PRF) of 1-3 GHz, PRF stability <; 5*10^-9, PRF tunability > 20MHz, average optical output power > 200 mW, pulse energy > 200pJ, high spatial beam quality (M2 <; 2.5) in addition to the space application requirements on launch vibrations, volume, weight, power consumption and efficiency. Previously, we have realized two types of passively mode-locked (ML) multiple section edge emitting lasers to address these challenging targets: (i) very long (13.5mm) monolithic tapered laser [1], and (ii) inverse bow-tie external cavity (EC) laser [2]. Both lasers are designed using the model from [3] and produce mode-locked pulses of 70-90pJ energy without amplifier stages. In this communication we report on the design, fabrication and testing of a novel monolithic tapered laser achieving pulse energy up to 200pJ from a solitary chip (Fig.1, panel (a)). While the epitaxial structure is the same as reported in [2] the tapered laser structure has now different cavity sections: two absorber sections, a tuning section and a gain section. The last one consists of the linear and the tapered waveguide parts and comprises beam spoilers in between the two parts.

Authors: N. Torcheboeuf; S. Kundermann; M. Krakowski; P. Resneau; M. Garcia; E. Vinet; Y. Robert; C. Theveneau; M. Lecomte; O. Parillaud; B. Gerard; D. L. Boiko

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